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| MJB44H11 (NPN), MJB45H11 (PNP) Preferred Devices Complementary Power Transistors D2PAK for Surface Mount http://onsemi.com . . . for general purpose power amplification and switching such as output or driver stages in applications such as switching regulators, converters and power amplifiers. * Low Collector-Emitter Saturation Voltage - * * * * VCE(sat) = 1.0 V (Max) @ 8.0 A Fast Switching Speeds Complementary Pairs Simplifies Designs Epoxy Meets UL 94, V-O @ 0.125 in ESD Ratings: Human Body Model, 3B > 8000 V Machine Model, C > 400 V SILICON POWER TRANSISTORS 10 AMPERES 80 VOLTS 50 WATTS MARKING DIAGRAM MAXIMUM RATINGS Rating Collector-Emitter Voltage Emitter-Base Voltage Collector Current - Continuous - Peak Total Power Dissipation @ TC = 25C Derate above 25C Total Power Dissipation @ TA = 25C Derate above 25C Operating and Storage Junction Temperature Range Symbol VCEO VEB IC PD 50 1.67 PD 2.0 0.016 TJ, Tstg -55 to 150 Watts W/C C Watts W/C Value 80 5 10 20 Unit Vdc Vdc Adc D2PAK CASE 418B STYLE 1 Y WW B4xH11 x = Year = Work Week = Specific Device Code = 4 or 5 B4xH11 YWW ORDERING INFORMATION Device MJB44H11 Package D2PAK D2PAK D2PAK D2PAK Shipping 50 Units/Rail 800/Tape & Reel 50 Units/Rail 800/Tape & Reel THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Symbol RJC RJA Max 2.5 75 Unit C/W C/W MJB44H11T4 MJB45H11 MJB45H11T4 For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Preferred devices are recommended choices for future use and best overall value. (c) Semiconductor Components Industries, LLC, 2003 1 December, 2003 - Rev. 1 Publication Order Number: MJB44H11/D MJB44H11 (NPN), MJB45H11 (PNP) ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic OFF CHARACTERISTICS Collector-Emitter Sustaining Voltage (IC = 30 mA, IB = 0) Collector Cutoff Current (VCE = Rated VCEO, VBE = 0) Emitter Cutoff Current (VEB = 5 Vdc) ON CHARACTERISTICS Collector-Emitter Saturation Voltage (IC = 8 Adc, IB = 0.4 Adc) Base-Emitter Saturation Voltage (IC = 8 Adc, IB = 0.8 Adc) DC Current Gain (VCE = 1 Vdc, IC = 2 Adc) DC Current Gain (VCE = 1 Vdc, IC = 4 Adc) DYNAMIC CHARACTERISTICS Collector Capacitance (VCB = 10 Vdc, ftest = 1 MHz) Gain Bandwidth Product (IC = 0.5 Adc, VCE = 10 Vdc, f = 20 MHz) SWITCHING TIMES Delay and Rise Times (IC = 5 Adc, IB1 = 0.5 Adc) Storage Time (IC = 5 Adc, IB1 = IB2 = 0.5 Adc) Fall Time (IC = 5 Adc, IB1 = IB2 = 0.5 Adc) td + tr MJB44H11 MJB45H11 ts MJB44H11 MJB45H11 tf MJB44H11 MJB45H11 - - 140 100 - - - - 500 500 - - ns - - 300 135 - - ns ns Ccb MJB44H11 MJB45H11 fT MJB44H11 MJB45H11 - - 50 40 - - - - 130 230 - - MHz pF VCE(sat) VBE(sat) hFE - - 60 40 - - - - 1.0 1.5 - - Vdc Vdc - VCEO(sus) ICES IEBO 80 - - - - - - 10 50 Vdc A A Symbol Min Typ Max Unit http://onsemi.com 2 MJB44H11 (NPN), MJB45H11 (PNP) 1.0 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.02 0.01 0.01 0.01 SINGLE PULSE 0.02 0.05 0.1 0.2 0.5 1.0 2.0 t, TIME (ms) 5.0 10 20 50 D = 0.5 0.2 0.1 0.05 0.02 ZJC(t) = r(t) RJC RJC = 1.56C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) ZJC(t) P(pk) r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) t1 t2 DUTY CYCLE, D = t1/t2 100 200 500 1.0 k Figure 1. Thermal Response 100 IC, COLLECTOR CURRENT (AMPS) 50 30 20 10 5.0 3.0 2.0 1.0 0.5 0.3 0.2 0.1 1.0 5.0 7.0 10 2.0 3.0 20 30 50 70 100 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 1.0 ms 100 s 10 s TC 70 C DUTY CYCLE 50% dc 1.0 s There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC - VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 2 is based on TJ(pk) = 150C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided TJ(pk) v 150C. TJ(pk) may be calculated from the data in Figure 1. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. Figure 2. Maximum Rated Forward Bias Safe Operating Area TA PD, POWER DISSIPATION (WATTS) TC 3.0 60 2.0 40 TC 1.0 20 TA 0 0 0 20 40 60 80 100 120 140 160 T, TEMPERATURE (C) Figure 3. Power Derating http://onsemi.com 3 MJB44H11 (NPN), MJB45H11 (PNP) 1000 1000 hFE, DC CURRENT GAIN hFE, DC CURRENT GAIN 100 VCE = 4 V VCE = 4 V 100 1V TJ = 25C TJ = 25C VCE = 1 V 10 0.1 1 IC, COLLECTOR CURRENT (AMPS) 10 10 0.1 1 IC, COLLECTOR CURRENT (AMPS) 10 Figure 4. MJB44H11 DC Current Gain Figure 5. MJB45H11 DC Current Gain 1000 1000 TJ = 125C 25C -40 C 100 VCE = 1 V hFE , DC CURRENT GAIN TJ = 125C 25C 100 -40 C VCE = 1 V 10 hFE , DC CURRENT GAIN 1 10 0.1 10 0.1 1 IC, COLLECTOR CURRENT (AMPS) 10 IC, COLLECTOR CURRENT (AMPS) Figure 6. MJB44H11 Current Gain versus Temperature Figure 7. MJB45H11 Current Gain versus Temperature 1.2 SATURATION VOLTAGE (VOLTS) SATURATION VOLTAGE (VOLTS) 1 0.8 0.6 0.4 0.2 0 0.1 IC/IB = 10 TJ = 25C VCE(sat) VBE(sat) 1.2 1 0.8 0.6 0.4 0.2 0 0.1 IC/IB = 10 TJ = 25C VCE(sat) VBE(sat) 1 IC, COLLECTOR CURRENT (AMPS) 10 1 IC, COLLECTOR CURRENT (AMPS) 10 Figure 8. MJB44H11 On-Voltages Figure 9. MJB45H11 On-Voltages http://onsemi.com 4 MJB44H11 (NPN), MJB45H11 (PNP) PACKAGE DIMENSIONS D2PAK CASE 418B-04 ISSUE H C E -B- 4 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 418B-01 THRU 418B-03 OBSOLETE, NEW STANDARD 418B-04. DIM A B C D E F G H J K L M N P R S V INCHES MIN MAX 0.340 0.380 0.380 0.405 0.160 0.190 0.020 0.035 0.045 0.055 0.310 0.350 0.100 BSC 0.080 0.110 0.018 0.025 0.090 0.110 0.052 0.072 0.280 0.320 0.197 REF 0.079 REF 0.039 REF 0.575 0.625 0.045 0.055 BASE COLLECTOR EMITTER COLLECTOR MILLIMETERS MIN MAX 8.64 9.65 9.65 10.29 4.06 4.83 0.51 0.89 1.14 1.40 7.87 8.89 2.54 BSC 2.03 2.79 0.46 0.64 2.29 2.79 1.32 1.83 7.11 8.13 5.00 REF 2.00 REF 0.99 REF 14.60 15.88 1.14 1.40 V W A 1 2 3 S -T- SEATING PLANE K G D H 3 PL M W J 0.13 (0.005) VARIABLE CONFIGURATION ZONE L M TB M R N U L P L M STYLE 1: PIN 1. 2. 3. 4. M F VIEW W-W 1 F VIEW W-W 2 F VIEW W-W 3 SOLDERING FOOTPRINT* 0.33 8.38 0.42 10.66 0.04 1.016 0.12 3.05 0.67 17.02 0.24 6.096 inches mm *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 5 MJB44H11 (NPN), MJB45H11 (PNP) ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2-9-1 Kamimeguro, Meguro-ku, Tokyo, Japan 153-0051 Phone: 81-3-5773-3850 ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative. http://onsemi.com 6 MJB44H11/D |
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